PART |
Description |
Maker |
MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
GL496 |
High Speed Infrared Emitting Diode
|
SHARP[Sharp Electrionic Components]
|
VSLB9530S |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
TSHF5200 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
VSMG2720-GS18 VSMG2720-GS08 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMG3700 VSMG3700-GS08 VSMG3700-GS18 VSMG370010 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG5210 TSHG521009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSFF551009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMY2850RG11 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
TSMF3710-GS08 TSMF3710-GS18 TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|